Presentation Information
[24a-P11-1]Mecahnical properties of bulk SiGe crystals II
〇Yasutomo Arai1, Shigeki Uchuda2, Masanori Kusama2, Tsuyoshi Kanda2, Koji Tsubaki2, Yoshifumi Katano2, Masami Kataoka3, Shingo Sasaki3, Yasunori Sato3, Okuhisa Matsumura3, Takeo Kobae3, Takuya Kawasaki3 (1.JAXA, 2.TOPCON, 3.TDY)
Keywords:
SiGe
We calculated concentration-concentration Scc(0) and number-number fluctuations Snn(0) of SiGe crystals at room temperature using the Gibbs free energy, compressibility composition dependence. The partial Si-Si and Ge-Ge number density fluctuations were derived by using the two fluctuations Scc(0) and Snn(0). We will discuss the relationship between the structural information and the nanoindentation hardness.