Presentation Information

[24p-11F-8]Hollow silicon metasurface perfect absorber with monolayer graphene

〇(M2)Kotaro Miyata1, Masaki Hashimoto2, Takuya Iwasaki3, Kenji Watanabe3, Takashi Taniguchi3, Junichi Fujikata4, Junichi Takahara1,5 (1.Osaka Univ. G. Eng., 2.Osaka Univ. Eng., 3.NIMS, 4.Tokushima Univ., 5.Photonics Ctr.)

Keywords:

metasurface

Graphene is expected to be applied to ultrafast optical devices since it has remarkable optical properties. However, the absorptivity of monolayer graphene is only about 2.3%, which is not sensitive enough to be applied to optical devices. In this study, we have achieved a perfect absorber at 1.55 μm by satisfying the degenerate critical coupling condition on a hollow silicon methasurfaces supported by monolayer graphene. The hollow metasurfaces were fabricated by Bosch process and the mechanically peeled graphene was transferred onto the metasurfaces with polymer stamps.