Presentation Information

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[24p-12H-8]High breakdown field strength in yttria films prepared by a photo-assisted chemical solution deposition

〇Tomohiko Nakajima¹, Yuuki Kitanaka¹, Iwao Yamaguchi¹, Junichi Nomoto¹ (1.AIST)

Keywords:

dielectric film,High breakdown field strength,Laser processing

Yttria films were prepared using the PCSD (Photo-assisted Chemical Solution Deposition) method. Focusing on the film thickness blank region (500 nm to 10 µm) of various film formation methods, we succeeded in achieving both an extremely large breakdown field strength reaching 12.5 MV/cm at a film thickness of 1.4 µm and a breakdown voltage far exceeding 1.0 kV.

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