[24p-12N-1~11] 11.5 Junction and circuit fabrication process, digital applications

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[24p-12N-7] Inner-wall metallization of through silicon vias using oblique evaporation

〇Bunpei Masaoka¹, Yutaka Tabuchi¹, Shinichi Yorozu¹ (1.RIKEN RQC)

Keywords:

Quantum computer,Superconducting circuits

The integration of superconducting qubits has been intensively studied. We focus on a vertical coaxial structure in stacked silicon substrates, which utilize through-silicon vias (TSV) as an essential ingredient for signal transmission. In the metallization of open via holes, scallop structure arising from the Bosch process, together with imperfect inner-wall metallization, significantly degrades transmission properties. We have established the inner-wall metallization using oblique evaporation and found that the control of the deposited metal thickness suppressed the deterioration. In this talk, we discuss the metallization of via holes with scallop structure for further simplifying the fabrication process.