[24p-1BC-1~20] 12.3 Functional Materials and Novel Devices

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[24p-1BC-14] Multi-level Operating Memory with Ionic Liquid Crystal Film as Resistive Switching Layer

〇(D)Wenzhong Zhang¹, Shingo Maruyama¹, Kenichi Kaminaga¹, Yuji Matsumoto¹ (1.Tohoku Univ.)

Keywords:

memory,ionic liquid crystal,multi-level operation

In this work, a memory device with the structure of Ag/[C₁₂mim][BF₄]/ hydrogen-terminated heavily-doped Si(100) was fabricated, where the ILC material,[C₁₂mim][BF₄], with its SmA phase near RT was used as a resistive switching layer. The device showed a bipolar switching behavior when the ILC film in SmA phase at RT, with improved endurance and retention performance as compared to our first-previous ILC-RRAM. At the same time, the multi-level operation was observed in the memory, enhancing its potential for practical applications.