講演情報
[24p-1BC-14]Multi-level Operating Memory with Ionic Liquid Crystal Film as Resistive Switching Layer
〇(D)Wenzhong Zhang1, Shingo Maruyama1, Kenichi Kaminaga1, Yuji Matsumoto1 (1.Tohoku Univ.)
キーワード：
memory、ionic liquid crystal、multi-level operation
In this work, a memory device with the structure of Ag/[C12mim][BF4]/ hydrogen-terminated heavily-doped Si(100) was fabricated, where the ILC material,[C12mim][BF4], with its SmA phase near RT was used as a resistive switching layer. The device showed a bipolar switching behavior when the ILC film in SmA phase at RT, with improved endurance and retention performance as compared to our first-previous ILC-RRAM. At the same time, the multi-level operation was observed in the memory, enhancing its potential for practical applications.