Presentation Information
[24p-1BM-4]Effect of Annealing in Octadecyltrichlorosilane SAM formation on SiO2
〇Yasuharu Miyamoto1, Yukifumi Yoshida1, Toru Utsunomiya2, Shogo Kunieda1, Yusuke Ueda1, Hiroyuki Sugimura2 (1.SCREEN Holdings, 2.Kyoto Univ.)
Keywords:
Self-Assembled Monolayer,Protective layer,AFM analysis
Self-Assembled Monolayer (SAM) has been proposed as protective layer in area selective deposition process or area selective etching process for the advanced semiconductor devices fabrication. A defect-free SAM formation is required to apply these processes. In this study, we focus on the construction of analytical method to detect the minute defects in SAM using by AFM and the formation of a defect-free Octadecyltrichlorosilane SAM on SiO2 substrate. In the results, the defects as small as 2 nm were detected by this analytical method. The SAM dehydration-condensation reaction was accelerated by annealing at 200 oC for 5 min after SAM formation and the defect-free SAM formation was achieved.