[24p-21B-1~12] 22.1 Joint Session M "Phonon Engineering"

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[24p-21B-6] Thermal conductivity of epitaxial GeTe thin film/Si and its phonon transport mechanism

〇Takafumi Ishibe^1,2, Nobuyasu Naruse³, Yutaka Mera³, Yuichiro Yamashita⁴, Yuji Ohishi⁵, Yoshiaki Nakamura^1,2 (1.Grad. School of Eng. Sci., Osaka Univ., 2.OTRI, Osaka Univ., 3.Shiga Univ. Medical Science, 4.AIST, 5.Eng. Osaka Univ., Osaka Univ.)

Keywords:

Thermoelectric material,Chalcogenide,Thermal conductivity

Thermoelectric film is drawing much attention as the power sources for the sensors utlized in portable devices because of its small structure and light weight. GeTe with low phonon group velocity and high band degeneracy is expected to exhibit low thermal conductivity and high Seebeck coefficient, respectively. Actually, a lot of groups have reported high thermoelectric performance of GeTe bulk. In this study, we characterize the thermal conductivity of epitaxial GeTe films/Si with controlled Ge vacancy amount and crystal domain, and elucidate the phonon transport mechanism by measuring the temperature dependence of thermal conductivity.