Presentation Information

[24p-22A-7]Effects of surface treatments on the photoluminescence intensity of buried quantum wells

〇(D)ZHAO MA1,2, Takaaki Mano1, Akihiro Ohtake1, Takashi Kuroda1,2 (1.NIMS, 2.Kyushu Univ.)


semiconductor,surface treatment,InGaAs

Implementation of appropriate surface treatments effectively improve the optical properties of III-V semiconductor. In this study, we performed various surface treatments on identical quantum well sample in order to understand the mechanism in more detail. In photoluminescence measurements, the surface-treated sample show enhanced PL intensity. In x-ray photoelectron spectroscopy measurements, treated samples show significantly reduced As-O peak intensity. These findings indicate that the degradation of the optical properties is mostly due to the surface oxide formation.