[24p-22A-1~7] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)English Presentation

[24p-22A-7] Effects of surface treatments on the photoluminescence intensity of buried quantum wells

〇(D)ZHAO MA^1,2, Takaaki Mano¹, Akihiro Ohtake¹, Takashi Kuroda^1,2 (1.NIMS, 2.Kyushu Univ.)

Keywords:

semiconductor,surface treatment,InGaAs

Implementation of appropriate surface treatments effectively improve the optical properties of III-V semiconductor. In this study, we performed various surface treatments on identical quantum well sample in order to understand the mechanism in more detail. In photoluminescence measurements, the surface-treated sample show enhanced PL intensity. In x-ray photoelectron spectroscopy measurements, treated samples show significantly reduced As-O peak intensity. These findings indicate that the degradation of the optical properties is mostly due to the surface oxide formation.