The 71st JSAP Spring Meeting 2024
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Session Details

Oral presentation15 Crystal Engineering : 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[24p-22A-1~7]15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Sun. Mar 24, 2024 1:30 PM - 3:30 PM JST
Sun. Mar 24, 2024 4:30 AM - 6:30 AM UTC
22A (Building No. 2)
Fumitaro Ishikawa(Hokkaido Univ.), Satoshi Hiura(Hokkaido Univ.)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[24p-22A-1]Circularly polarized photoluminescence properties of dilute nitride InGaAsN quantum dots grown at low temperature

〇Ayano Morita1, Satoshi Hiura1, Junichi Takayama1, Akihiro Murayama1 (1.Hokkaido Univ.)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[24p-22A-2]Molecular Beam Epitaxial Growth of MnSb, InSb and MnSb/InSb on GaAs (111) B for spin device application

〇(D)Faysal MD KABIR1, Md Tauhidul Islam1, Masashi Akabori1 (1.Japan Advanced Institute of Science and Technology (JAIST),)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[24p-22A-3]Observation of the S-K Growth Mode of InAs/GaAs Quantum Dots Using the Magnification Inferred Curvature Method

〇JINKWAN KWOEN1, Yasuhiko Arakawa1 (1.U. Tokyo, NanoQuine)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[24p-22A-4]Antimony Surfactant Effects on Growth of Diluted III-V Nitride Alloys

〇Keisuke Yamane1, Masashi Hikosaka1, Akihiro Wakahara1 (1.Toyohashi Tech.)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[24p-22A-5]Investigation of compositional changes and luminescence properties of InGaAs/GaAsSb/InGaAs Type-II quantum well on GaAs substrate

〇Koichiro Kunitake1, Kazuki Usui1, Rikuto Takashima1, Masakazu Arai1 (1.Univ. of Miyazaki)
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[24p-22A-6]Growth of metamorphic InSb on GaAs (111)A: Effect of thin InAs interlayers

〇Takaaki Mano1, Akihiro Ohtake1 (1.NIMS)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)English Presentation

[24p-22A-7]Effects of surface treatments on the photoluminescence intensity of buried quantum wells

〇(D)ZHAO MA1,2, Takaaki Mano1, Akihiro Ohtake1, Takashi Kuroda1,2 (1.NIMS, 2.Kyushu Univ.)
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