In the era of the Internet of Things (IoT), where smart devices are becoming increasingly prevalent, there is a growing need for the development of organic transistor circuits that offer a combination of low power consumption, high amplification ratio, and flexibility. Organic Source-Gated Transistor (OSGT) represent a promising technology in this regard. These transistors intentionally create a Schottky barrier at the source electrode/organic semiconductor interface and control current through the depletion layer near the source electrode. They are known for their ability to operate at low voltages while providing high gain. In our study, we report impressive results from OSGT using p-type organic semiconductors, with an intrinsic gain surpassing 900 and an amplification factor exceeding 700 in a single-stage amplifier circuit. These findings offer significant potential for advancing IoT technology.