[24p-31B-1~15] 8.5 Plasma phenomena, emerging area of plasmas and their new applications

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[24p-31B-2] Experimental trial to integrate the ion-beam deposition method with the ion-beam-assisted deposition method for the formation of SiO and SiC films

〇Satoru Yoshimura¹, Takae Takeuchi¹, Masato Kiuchi^1,2 (1.Osaka Univ., 2.Celast Lab.)

Keywords:

silicon oxide,silicon carbide

We attempted to deposit silicon oxide and silicon carbide films by spraying source gas onto a substrate while the substrate was also irradiated with a low-energy SiO+ or SiCH5+ ion beam. The energy of the ions was 50-100 eV, and the substrate temperature was 300, 550, or 800 degree. Following this process, we were able to deposit a film on the substrate.In all cases, we confirmed that the film deposition rate was substantially improved by supplying source gas during the ion-beam irradiation.