[24p-61C-1~7] Progress in deep ultraviolet light devices

4:00 PM - 4:30 PM JST(7:00 AM - 7:30 AM UTC)

[24p-61C-7] Fabrication of vertical AlGaN-based ultraviolet-B laser diodes

〇Motoaki Iwaya¹, Toma Nishibayashi¹, Ryosuke Kondo¹, Ryoya Yamada¹, Yoshinori Imoto¹, Sho Iwayama¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Hideto Miyake² (1.Meijo Univ., 2.Mie Univ.)

Keywords:

AlGaN,laser diodes,vertical devices

In this presentation, we report the results of prototype fabrication of vertical AlGaN-based UV-B semiconductor lasers. Specifically, room-temperature pulsed oscillation of a vertical AlGaN-based UV-B semiconductor laser was achieved by developing a substrate exfoliation technique, selecting an optimal support substrate, and developing device process technology. Details will be presented.