[24p-71B-1~8] Spintronics Technology: Frontiers of Tunnel Magnetoresistance Research and Memory Applications

3:55 PM - 4:25 PM JST(6:55 AM - 7:25 AM UTC)

[24p-71B-6] Technical issues to be solved for mass production of spin-orbit-torque magnetic memory

〇Katsuyuki Nakada¹, Tomoyuki Sasaki¹ (1.TDK Corp.)

Keywords:

MRAM,MTJ,spin orbit torque

We report on the development trend of spin-orbit-torque (SOT) magnetic memory in the world and our development status. The technical issues (write margin, field-free magnetization reversal, etc.) to be solved for mass production will be organized by SOT structure type. Based on these considerations, the first candidate SOT structure that we consider and the future prospects will be discussed.