Session Details
[24p-71B-1~8]Spintronics Technology: Frontiers of Tunnel Magnetoresistance Research and Memory Applications
Sun. Mar 24, 2024 1:30 PM - 5:25 PM JST
Sun. Mar 24, 2024 4:30 AM - 8:25 AM UTC
Sun. Mar 24, 2024 4:30 AM - 8:25 AM UTC
71B (Building No. 7)
Tomohiro Nozaki(AIST), Hideo Kaiju(Keio Univ.)
[24p-71B-1]Opening
〇Tomohiro Nozaki1 (1.AIST)
[24p-71B-2]Physics and Device Applications of MgO-based Magnetic Tunnel Junctions
〇Shinji Yuasa1, Takayuki Nozaki1, Tatsuya Yamamoto1, Tomohiro Nozaki1, Yuki Hibino1, Hiroyasu Nakayama1, Tomohiro Ichinose1, Sumito Tsunegi1, Tomohiro Taniguchi1, Kay Yakushiji1, Hitoshi Kubota1 (1.AIST)
[24p-71B-3]Observation of room temperature giant tunnel magnetoresistance of 631%
〇Hiroaki Sukegawa1, Thomas Scheike1, Zhenchao Wen1, Seiji Mitani1 (1.NIMS)
[24p-71B-4]Development of tunnel magnetoresistive device materials using computational / data science
〇Shigemi Mizukami1,2, Atsufumi Hirohata2, Masafumi Shirai3,2 (1.AIMR, Tohoku Univ., 2.CSIS, Tohoku Univ., 3.RIEC, Tohoku Univ.)
[24p-71B-5]Process Technologies for High-Performance MRAM Cells
〇Shoji Ikeda1,2, Hiroaki Honjo1, Tetsuo Endoh1,2,3,4 (1.Tohoku Univ. CIES, 2.Tohoku Univ. CSIS, 3.Tohoku Univ., 4.Tohoku Univ. RIEC)
[24p-71B-6]Technical issues to be solved for mass production of spin-orbit-torque magnetic memory
〇Katsuyuki Nakada1, Tomoyuki Sasaki1 (1.TDK Corp.)
[24p-71B-7]Trends of Embedded MRAM IP Development for MCUs
〇Tomoya Saito1 (1.Renesas Electronics)
[24p-71B-8]14nm MTJ with stacked storage layer for high-density STT-MRAM
〇Masaru Toko1, Hideyuki Sugiyama1, Kamata Chikayoshi1, Itai Shogo1, Takashima Rina1, Takeo Koike1, Nakayama Masahiko1 (1.Kioxia Corp.)