Presentation Information
[24p-P05-7]Electrical Characteristics of the Ag/Si Schottky Barrier Diode with Embedded Metal Nanoparticles at the Ag/Si Interface
〇Masashi Saito1, Mitsuru Watanabe1 (1.Osaka Research Institute of Industrial Science and Technology)
Keywords:
metal nanoparticle,Schottky barrier diode
Control of electrical properties at metal/semiconductor interfaces is one of the most important parts of modern electronics field. In controlling the electrical properties, the Schottky barrier height inhomogeneity at the metal/semiconductor interface has attracted increasing attention. In this study, we fabricated Ag/Si Schottky barrier diodes with embedded metal nanoparticles at the Ag/Si interface, and investigated the impacts of the introduced nanoparticles layer on the electrical properties.