Presentation Information

[24p-P06-12]Improvement of short-circuit current density in SnS homojunction solar cells

〇(M1)Takayuki Miyai1, Sakiko Kawanishi1, Masakatsu Hasegawa1, Issei Suzuki2, Takahisa Omata2, Yoshiaki Kashiwaya1 (1.Kyoto Univ., 2.Tohoku Univ.)

Keywords:

solar cells

SnS is expected to be a promising material for solar cells because it contains no toxic or rare elements and has an optimal band gap for solar cells. The authors previously made SnS homojunctions by sputtering p-type SnS polycrystals on Cl-doped n-type SnS single crystals, but the short-circuit current density (Jsc) was as low as 7.5 mAcm-2. To enhance Jsc, high-quality p-type SnS films were deposited by the liquid phase epitaxy. As a result, the Jsc was improved to 15 mAcm-2.