Presentation Information
[24p-P07-4]Application of Principal Component Analysis for Microscopic Property Analysis of InGaAs-HEMT
〇(B)Kento Shiga1, Taniwaki Michiki2, Nagaoka Ryunosuke2, Watanabe Issei3, Kotsugi Masato2, Hukidome Hirokazu1 (1.Tohoku Univ., 2.Tokyo Univ of Science, 3.NICT)
Keywords:
semiconductor,InGaAs-HEMT,informatics
We are conducting research with the aim of leveraging the microscopic material property variations during device operation for performance analysis. Using a device simulator, we acquired material property data from InGaAs-HEMT (High Electron Mobility Transistor) internals and performed principal component analysis, obtaining data that suggests a connection to performance analysis.