Presentation Information
[24p-P14-3]Negative differential resistance observed in GeSiSn/GeSn double barrier structure and their device operation analysis
〇Shigehisa Shibayama1, Shuto Ishimoto1, Mitsuo Sakashita1, Masashi Kurosawa1, Osamu Nakatsuka1,2 (1.Nagoya Univ., 2.IMass, Nagoya Univ.)
Keywords:
GeSn,GeSiSn,RTD