Presentation Information
[24p-P15-5]Growth of high-density InAsSb/InAs core-shell nanowires on Si(111) substrate
〇Rikuta Watanabe1, Ryusuke Nakagawa1, Naoya Miyashita1, Koichi Yamaguchi1 (1.Univ. Electro-Comm.)
Keywords:
Molecular beam epitaxy,Nanowire
Semiconductor nanowires (NWs) are expected to be applied to various next-generation optoelectronic devices, and the development of fabrication techniques for NW size control, high density, vertical heterostructure, core-shell structure, and array control is an important issue. Recently, we have developed a technique for growing high-density and highly uniform InAs quantum NWs on Si(111) substrates.In this study, we report on the MBE growth of high-density InAs/InAsSb-based core-shell NWs on Si(111) substrates, and the growth process and luminescence properties of the InAs/InAsSb-based core-shell NWs were investigated.