[24p-P15-1~10] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[24p-P15-8] Analysis of codoped ultrathin silicon-on-insulator layers for pn tunnel diodes

〇(M1)Shun Masui^1,2, Reon Asai^1,2, Baskoro Arif Rianto^1,2, Yutaro Sasaki^1,2, Daniel Moraru^1,2 (1.Shizuoka Univ, 2.Elec Inst.)

Keywords:

nano-device,BTBT

Electronic transport via BTBT can be observed in highly doped pn diodes (tunnel diodes). By evaluating the current-voltage characteristics under low-temperature conditions (8.3K), a NDC peak due to BTBT via energy levels within the depletion layer was observed, and this is thought to be due to quantum dots (QDs) caused by the random distribution of P and B. There may be a bias in the impurity distribution due to the influence of the diffusion distance in the doping process. In response to this, we conducted an investigation of the impurity doping concentration in the depth direction.