Presentation Information
[24p-P16-3]Nanolaminated Mist CVD High-κ AlOx/TixAl1-xOy/TiO2 films on P+-Si for TMDCs-MOSFETs
〇(P)Abdul A Kuddus1, Kojun Yokoyama2, Mainul Hossain3, Jaker Hossain4, Rasidul Islam5, keiji Ueno2, Shinichiro Mouri1, Hajime Shirai2 (1.Ritsumeikan Univ., 2.Saitama Univ., 3.Univ. of Dhaka, 4.Univ. of Rajshahi, 5.BSFMST Univ.)
Keywords:
High-k,Mist CVD,MOSFET
In our recent study, a markedly reduced interface trap state density of 1×10^10 cm-2eV-1 was obtained by varying Ti composition in TixAl1-xOy(TAO) film. Further, an adjusted dielectric constant of over 20 measured by SE observation was achieved in TixAl1-xOy (50 nm) alloy films, while it was of >30 in stacked AlOx (37 nm)/TiO2 (13 nm) with Eg of 5 eV. Thus, TixAl1-xOy(TAO), Al-and Ti- oxides are found as a strong potential as gate dielectric to be used in MOSFET devices. Herein, we will present the manufacturing of mist CVD nanolaminated AlOx/TixAl1-xOy(TAO)/TiO2 by mist CVD followed by their electrical characteristics as the gate dielectric in 2D TMDCs-channel MOSFETs toward low voltage, low energy consumption, high efficiency integrated circuits.