The 71st JSAP Spring Meeting 2024
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Poster presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" (Poster)

[24p-P16-1~41]21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" (Poster)

Sun. Mar 24, 2024 4:00 PM - 6:00 PM JST
Sun. Mar 24, 2024 7:00 AM - 9:00 AM UTC
P16 (Building No. 9)
English Presentation

[24p-P16-1]Solution-dependent electrostatic spray deposition for ZnO growth processes

〇(DC)Fysol Ibna1,2,3,4, Keisuke Tomono1, Keito Okubo1, Kohta Hori1, Mutsumi Sugiyama1,5 (1.Tokyo Univ. Science, 2.Univ. of Dhaka, 3.BRAC Univ., 4.CITY Univ., 5.RIST, TUS)

[24p-P16-2]Effects of Solution Concentration on Dip-Coating of ZnO Buffer Layers for Formation of ZnO Nanorods/Cu2O Heterostructures by Chemical Bath Deposition

〇(M1)Takaki Shiba1, Keigo Shikimi1, Tomoaki Terasako1 (1.Grad. School Sci. & Eng., Ehime Univ.)
English Presentation

[24p-P16-3]Nanolaminated Mist CVD High-κ AlOx/TixAl1-xOy/TiO2 films on P+-Si for TMDCs-MOSFETs

〇(P)Abdul A Kuddus1, Kojun Yokoyama2, Mainul Hossain3, Jaker Hossain4, Rasidul Islam5, keiji Ueno2, Shinichiro Mouri1, Hajime Shirai2 (1.Ritsumeikan Univ., 2.Saitama Univ., 3.Univ. of Dhaka, 4.Univ. of Rajshahi, 5.BSFMST Univ.)

[24p-P16-4]The influence of deposition pressure and temperature on rutile GeO2 thin films

〇Fumiyoshi Nishiyama1, Takashi Inomata1, Hirokazu Izumi2 (1.Kisan Kinzoku Chemicals, 2.Hyogo Pref. Inst of Tech.)

[24p-P16-5]Synthesis, structural and optical properties of Ga2O3 thin films prepared by metal organic decomposition using spin coating

Shuna Fujita1, Ami Matsushita1, 〇Junji Sawahata1 (1.NIT, Ibaraki col.)

[24p-P16-6]Amorphous Ga2O3 thin films grown on quartz substrates and their photoconductive properties

〇Hibiki Otomo1, Issei Tanaka1, Kazuyuki Uno1 (1.Wakayama Univ.)

[24p-P16-7]Remote hetero epitaxy of α-Ga2O3 by mist CVD method

〇(M1C)Shoki Kanda1, Kentaro Kaneko2, Shinichiro Mouri1 (1.Ritsumeikan Univ. Col. of Sci. & Eng., 2.Ritsumeikan Univ. ROST)

[24p-P16-8]Consideration of deposition conditions of buffer layers for preparation of ZnO (1120) films on single crystal NdGaO3 (001) substrates by a RF sputtering method

〇(B)Ryo Otoguro1, Koji Kawasaki1, Mio Sakuma1, Jun Suzuki1, Yuji Imai1, Takami Abe2, Yasube Kashiwaba2, Hiroshi Osada2, Yasuhiro Kashiwaba1 (1.Nat. Inst. Tech., Sendai College, 2.Iwate Univ)

[24p-P16-9]Characterization of SnS surface morphology depending on sulfurization pressure of Sn thin films

〇(M1)Daiki Watanabe1, Kento Moriya1, Shinya Aikawa1 (1.Kogakuin Univ.)

[24p-P16-10]Band diagram of the IGZO/ p-type oxide semiconductor heterointerfaces

〇Ryusuke Seino1,2, Ichiro Takakuwa1, Kenichi Ozawa3, Keishi Nishio1, Makoto Minohara2 (1.Tokyo Univ. Sci., 2.AIST, 3.KEK)

[24p-P16-11]Effect of preparation condition of NiO thin film on β-Ga2O3(-201) from solution

〇(M1)Satomi Yamawaki1, Arifumi Okada1 (1.Kyoto Inst. Tech.)

[24p-P16-12]Effects of the annealing temperature during the fabrication on the structure of ZnGa2O4 thin films

〇(B)Reiya Kase1, Takayuki Nakane2, Takashi Naka2, Satoshi Ishii1 (1.Tokyo Denki Univ., 2.NIMS)

[24p-P16-13]Characterization of SnSO4 fabricated by sulfurization of metal Sn depending on oxigen pressure

〇(B)Kento Moriya1, Daiki Watanabe1, Takuma kawaguchi1, Shinya Aikawa1 (1.Kogakuin Univ.)

[24p-P16-14]Reduction of oxygen vacancy in SnO2:N thin films prepared by RF magnetron sputtering and characterization of their composition in the bulk

〇(M2)Takuma Kawaguchi1, Ryuji Oishi2, Maki Shimizu2, Hijikata Yasuto2, Shinya Aikawa1 (1.Kogakuin Univ., 2.Saitama Univ.)

[24p-P16-15]Atmospheric Pressure Chemical Vapor Deposition of Zn-Ga-O Films on c-Plane Sapphire Substrate

〇ARATA SUGAWARA1, Ryuichi Hamazono1, Tomoaki Terasako1, Masakazu Yagi2 (1.Ehime Univ., Grad. School Sci. & Eng., 2.Natl. Inst. Technol (KOSEN). Kagawa Col.)

[24p-P16-16]Cross-Sectional Observation of Dislocation Line under Arrow Head-type Etch Pits in β-Ga2O3(001) Epitaxial Substrates

〇(M2)Sou Isaji1, Tomomichi Terada1, Ryuji Nosaka1, Noriyuki Hasuike1, Toshiyuki Isshiki1, Kenji Kobayashi2, Takeshi Fujitani2, Yongzhao Yao3, Yukari Ishikawa3 (1.Kyoto Inst. Tech., 2.Hitachi High-tech, 3.Japan Fine Ceramics Center)

[24p-P16-17]The Burgers vectors of dislocations corresponding to the Cannonball type etch pits in β-Ga2O3 (001) bulk wafers

〇Tomomichi Terada1, Sou Isaji1, Noriyuki Hasuike1, Toshiyuki Isshiki1, Kenji Kobayashi2, Takeshi Fujitani2, Yongzhao Yao3, Yukari Ishikawa3 (1.Kyoto Inst. Tech., 2.Hitachi High-Tech, 3.Japan Fine Ceramics Center)

[24p-P16-18]Challenge to intercalation of NH3 molecule into layered SnO

〇(B)Yoshikazu Shin1, Ishida Tetsuya1, Kobayashi Tsubasa1, Aikawa Shinya1 (1.Kogakuin University)

[24p-P16-19]Improvement of transparent conductivity for Ti-doped ZnO thin films by annealing

〇(M1)Naoya Utsu1, Ichiro Takano2 (1.Kogakuin Univ., 2.Kogakuin Uni.)

[24p-P16-20]Changes in Electrical Properties of GZO Films Sputtered by Mg-Doped Target

〇Shugo Abe1, Kotaro Tsuchie1, Shuhei Funaki1, Yasuji Yamada1 (1.Shimane Univ.)

[24p-P16-21]Microstructural and electrical characterization of GZO transparent conducting films on PET substrates

〇(M1)Yuki Matsuoka1, Tetsuya Masuda1, Tsutomu Muranaka1, Yoichi Nabetani1, Takashi Matsumoto1 (1.Univ. of Yamanashi)

[24p-P16-22]Photoconductive properties of GZO thin films on flexible PET substrates

〇(M1)Tetsuya Masuda1, Yuki Matsuoka1, Tsutomu Muranaka1, Yoichi Nabetani1, Takashi Matsumoto1 (1.Univ. of yamanashi)

[24p-P16-23]Degradation mechanism of flexibility in H-doped In2O3-based transparent conductive film

〇(M1)Kanta Kibishi1, Shinri Yamadera1, Tsubasa Kobayashi1, Ayumu Nodera1, Ichiro Takano1, Shinya Aikawa1 (1.Kogakuin Univ.)

[24p-P16-24]Effect of Ag layer thickness on transmittance and conductivity in ITO/Ag/ITO films

〇(B)Yuka Saito1, Koshiji Fukuro1, Yoji Yasuda1, Katsumi Yamada1, Takayuki Uchida1 (1.Tokyo Polytechnic Univ.)

[24p-P16-25]Effectiveness of Double Depotision for Resistance Reduction of
ZnO Transparent Conductive Films

〇Reisuke Fujita1, Cuzovic Tihomir1, Daiki Ishida2, Kyohei Hosaka2, Naoyuki Sato1 (1.Ibaraki Univ., 2.Ibaraki univ.)

[24p-P16-26]Synthesis of CaZnO-TCF by employing Ca-Zn-O2 Mixture Plasma

〇Naoyuki Sato1, Tihomir Cuzovic1, Reisuke Fujita1, Ishida Daiki1, Kyouhei Hosaka1 (1.Ibaraki Univ.)

[24p-P16-27]Electronic states and dielectric properties of power semiconductor gallium oxide by quasiparticle self-consistent GW method

Kazuki Muranaka1, 〇Masao Obata1, Ko Hyodo1, Takao Kotani2, Tatsuki Oda1 (1.Kanazawa Univ., 2.Tottori Univ.)

[24p-P16-28]PPF Behavior and Potentiation-Depression Characteristics on Electrical Properties of PEDOT:PSS/ZnO Nanorods/GZO Heterostructures

〇Tomoaki Terasako1, Masakazu Yagi2, Tetsuya Yamamoto3 (1.Grad. School Sci. & Eng., Ehime Univ., 2.Natl. Inst. Technol., Kagawa Col., 3.Res. Inst., Kochi Univ. Technol.)

[24p-P16-29]Deep UV irradiated B-doped In2O3 TFTs with low-temperature annealing

〇(M1)Shinri Yamadera1, Kanta Kibishi1, Shinya Aikawa1 (1.Kogakuin Univ)

[24p-P16-30]Fabrication and Characterization of Indium Oxide Thin-Film Transistors using Aqueous Precursor Solution and Excimer Light

〇(M1)Ryosuke Kasahara1, Takeaki Komai1, Hideo Wada1, Masatoshi Koyama1, Akihiko Fujii1, Akihiro Shimizu2, Noritaka Takezoe2, Shion Yamaguchi2, Hiroyasu Ito2, Toshihiko Maemoto1 (1.NMRC, Osaka Inst. of Tech., 2.Ushio Inc.)

[24p-P16-31]Investigation of depletion layer for reducing carrier recombination in NiO/ZnO visible-light-transparent solar cells

〇Yuna Koide1, Mutsumi Sugiyama1,2 (1.Tokyo Univ. Sci, 2.RIST)

[24p-P16-32]Fabrication of SnO thin films using SnO2 sputtering target: comparison of post-deposition annealing atmosphere in Ar/H2 and vacuum

〇(M1)Tubasa Kobayasi1, Takuma Kawaguchi1, Kanta Kibishi1, Shinya Aikawa1 (1.Kogakuin Univ.)

[24p-P16-33]Effects of pH Control on Fabrication of ZnO Nanorods Layers by Chemical Bath Deposition and UV Light Detecting Properties of PEDOT:PSS/ZnO Nanorods/ZnO:Ga Heterostructures

〇shion suzuki1, Taichi Fujikawa1, Tomoaki Terasako1, Masakazu Yagi2, Tetsuya Yamamoto3 (1.Grad. School Sci. & Eng., Ehime Univ., 2.Natl. Inst. Technol., Kagawa Col., 3.Res. Inst., Kochi Univ. Technol.)

[24p-P16-34]Annealing Indium Tin Oxide film by KrF excimer laser

〇(B)Maiki Sato1, Hisato Yabuta1,2, Yohei Tanaka2, Keita Katayama1, Chihiro Iwamoto4, Kaname Imokawa3, Taisuke Miura3 (1.Kyushu Univ., 2.Department of Gigaphoton Next GLP, 3.Gigaphoton Inc., 4.Ibaraki Univ.)

[24p-P16-35]The effect of post deposition annealing on crystal structures and deep-UV responses of mist CVD grown amorphous Ga2O3 thin films

〇(M1)Manami Miyazaki1, Iori Yamasaki1, Yuma Tanaka1, Masatoshi Koyama1, Akihiko Fuji1, Toshihiko Maemoto1 (1.Osaka Inst. Tech.)

[24p-P16-36]Improvement of Cu/Cu2O PV cell properties by adjusting the plasma gas atmosphere

〇TAIYO YOKOSE1, KENTA AIZAWA2, NAOYUKI SATO1 (1.Ibaraki Univ., 2.Ibaraki univ.)

[24p-P16-37]Dependence of conduction type of Ni(OH)2 on deposition methods

Tasuku Kubota1, 〇Koji Abe1 (1.Nagoya Inst. Tech.)

[24p-P16-38]Impact of Defect existence on Thermal Diffusion of Ga for ZnO Nanoparticles

〇(M1C)Kenta Onitsuka1, Toshiyuki Yoshida1, Yasuhisa Fujita1 (1.Shimane University Nat. Sci.& Technol.)
English Presentation

[24p-P16-39]Effect of Thermal Pressing Process on Resistivity of Ga Doped ZnO Nanoparticle Layers

〇(M1)Shrestha Dey Monty1, Toshiyuki Youshida1, Yasuhisa Fujita1 (1.Shimane University)

[24p-P16-40]Crystal Growth of Yttrium Oxide on Carbon Substrates

〇(B)Mahiro Ushida1, Satoshi Torimi2, Tomoki Otsuka1, Yuri Shimizu1, Taisei Hattori1, Kentaro Kaneko3 (1.Col. of Sci. & Eng. Ritsumeikan Univ., 2.TOYO TANSO, 3.ROST Ritsumeikan Univ.)

[24p-P16-41]Improvement of crystallinity in rutile-structured GeO2 thin films

〇Yuri Shimizu1,2, Toyosuke Ibi2, Tsutomu Araki1, Kentaro Kaneko3,2 (1.Col. of Sci. & Eng. Ritsumeikan Univ., 2.Patentix Inc. Patentix Inc., 3.ROST Ritsumeikan Univ.)
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