Presentation Information

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25a-11E-6]Uncooled terahertz bolometer using a silicon-on-insulator (SOI) microelectromechanical-system(MEMS) resonator

〇Kazuki Ebata¹, Mirai Iimori¹, Takehito Suzuki¹, Shunji Yamamori¹, Kouhei Urashima¹, Isao Morohashi², Kazusuke Maenaka³, Kazuhiko Hirakawa⁴, Ya Zhang¹ (1.Inst. of Eng., Tokyo Univ. of Agri.&Techno, 2.NICT, 3.Univ. of Hyogo, 4.Univ. of Tokyo)

Keywords:

MEMS,terahertz,sensor

MEMS resonators are promising for realizing sensitive and fast terahertz sensors owing to their intrinsic high sensitivities. Previously, we have developed a terahertz(THz) bolometer with a GaAs doubly clamped microelectromechanical-system(MEMS) resonator. The MEMS bolometer detects the incident THz light as a shift in the resonance frequency and works as a very sensitive THz sensor. However, owing to the interactions between THz wave and the optical phonons in GaAs material, there is a zero-sensitivity band at 7-10 THz, which hinders the use of MEMS bolometer in broadband THz spectroscopy measurements.In this research, we have developed an uncooled THz bolometer by using a silicon-on-insulator (SOI) MEMS resonator. High-resistivity silicon has a very flat transmission spectrum in THz and frequency band, therefore, is very promising for realizing broadband THz sensors.

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