Presentation Information
[25a-12F-2]Monitoring Iron Oxide Thin Film Growth by Plasma Emission Spectrometry in Reactive Sputtering Process
〇Rintaro Minami1, Eiji Kita1, Hideto Yanagihara1 (1.Tsukuba Univ.)
Keywords:
reactive sputtering,plasma emission
In the reactive sputtering method, the deposition rate varies depending on the original target mode, even under the same conditions, which impairs the reproducibility of thin film growth. Therefore, it is necessary to know the state of the thin film during deposition by physical phenomena that can be observed in-situ during the deposition process.
In this study, the plasma emission spectra obtained during the deposition process were statistically analyzed to evaluate the valence and predict the deposition rate of iron oxides deposited by varying the oxygen flow rate.
In this study, the plasma emission spectra obtained during the deposition process were statistically analyzed to evaluate the valence and predict the deposition rate of iron oxides deposited by varying the oxygen flow rate.