Presentation Information
[25a-12K-4]Electron temperatures in double well quantum cascade cooling structures (Ⅲ)
〇Xiangyu Zhu1, Gueric Etesse2, Marc Bescond1,2, Gerald Bastard2,3, Naomi Nagai1, Kazuhiko Hirakawa1 (1.IIS/LIMMS, UTokyo, 2.IM2NP-CNRS, AMU, 3.Ecole Normale Superieure)
Keywords:
semiconductor,quantum well,thermionic cooling
In this work, we have studied a double quantum well (QW) structure as a model for the quantum cascade cooling (QCC) structure. The structure consists of two 5 nm-thick AlxGa1-xAs QWs with different Al compositions (x = 0.1 for QW1 and x = 0.2 for QW2) sandwiched by Al0.35Ga0.65As or Al0.7Ga0.3As barriers (see Fig. 1(a)). As an electron cascades through the double QW structure, it can absorb multiple phonons, which can improve the cooling efficiency, when compared with a single QW structure. The tall Al0.7Ga0.3As barriers are designed to block above-barrier thermal current from QW1 and the emitter, making the sequential cascading transport dominant.
We observe electron cooling effect in both QWs with anti-correlated oscillatory behavior, showing characteristic features at V = ~0.2 V/~0.35 V/~0.6 V. More detials would be discussed on the conference.
We observe electron cooling effect in both QWs with anti-correlated oscillatory behavior, showing characteristic features at V = ~0.2 V/~0.35 V/~0.6 V. More detials would be discussed on the conference.