The 71st JSAP Spring Meeting 2024
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Oral presentation13 Semiconductors : 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[25a-12K-1~9]13.6 Nanostructures, quantum phenomena, and nano quantum devices

Mon. Mar 25, 2024 9:30 AM - 12:00 PM JST
Mon. Mar 25, 2024 12:30 AM - 3:00 AM UTC
12K (Building No. 1)
Yukihiro Harada(Kobe Univ.)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[25a-12K-1]Electric field modulated terahertz wave measurements based on the phenomenon of electric field screening originating from photogenerated carriers

〇Takayuki Hasegawa1, Osamu Kojima2, DaeGwi Kim3 (1.Osaka Inst. Technol., 2.Chiba Inst. Technol., 3.Osaka Metro. Univ.)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[25a-12K-2]Terahertz wave generation due to difference frequency mixing in a GaSb/AlGaSb multiple quantum well

〇Osamu Kojima1, Ren Ogasawara1, Kouichi Akahane2 (1.Chiba Inst. Tech., 2.NICT)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[25a-12K-3]I-V characteristics and scattering times in AlGaAs/GaAs superlattices

〇Nagi Maeda1, Xiangyu Zhu1, Naomi Nagai1, Marc Bescond2, Kazuyuki Kuroyama1, Kazuhiko Hirakawa1 (1.IIS/INQIE, Univ. of Tokyo,, 2.IN2MP, Aix-Marseille Univ.)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)English Presentation

[25a-12K-4]Electron temperatures in double well quantum cascade cooling structures (Ⅲ)

〇Xiangyu Zhu1, Gueric Etesse2, Marc Bescond1,2, Gerald Bastard2,3, Naomi Nagai1, Kazuhiko Hirakawa1 (1.IIS/LIMMS, UTokyo, 2.IM2NP-CNRS, AMU, 3.Ecole Normale Superieure)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)English Presentation

[25a-12K-5]Anomalous Photoluminescence Properties due to Strong Coupling of InAs/InAsSb In-Plane Ultrahigh-Density Quantum Dots

〇(DC)SIMJUI OON1, Naoya Miyashita1, Koichi Yamaguchi1 (1.UEC Tokyo)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[25a-12K-6]Preparation of quantum discs by stacked submonolayer growth

〇Haruto Okuizumi1, Ronel Roca1, Itaru Kamiya1 (1.Toyota Tech. Inst.)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[25a-12K-7]Study on mask materials for GaN nanowire fabrication using contactless PEC etching

〇Hisahiro Furuuchi1,2, Junichi Motohisa1,2, Taketomo Sato1,2 (1.Hokkaido Univ., 2.RCIQE Hokkaido Univ.)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[25a-12K-8]Fabrication of AlN Nanorods via Sputtering and Enhancement of Piezoelectricity

〇Jundong Song1, Daichi Morimoto1, Takashi Iijima1,2, Soichiro Okamura1 (1.TUS, 2.AIST)
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[25a-12K-9]The charge retention characteristics of resistive switching memory using Si/CaF2 quadruple-barrier resonant tunneling structure

〇(M2)Maiko Hoshino1, Ryoya Usami1, Kanta Murakami1, Toya Shioji1, Masahiro Watanabe1 (1.Tokyo Tech)
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