Presentation Information
[25a-1BJ-2]Impact of cycling degradation and its recovery in interfacial SiO2 in HfO2-FeFET on Vth behavior
〇Viktoria Schlykow1, Kunifumi Suzuki1, Yoko Yoshimura1, Takamasa Hamai1, Kiwamu Sakuma1, Kazuhiro Matsuo1, Kota Takahashi1, Masamichi Suzuki1, Masumi Saitoh1, Reika Ichihara1 (1.Institute of Memory Technology R&D, Kioxia Corporation)
Keywords:
FeFET,charge trap,recovery
By direct observation of electron trapping, a detailed understanding of cycling induced degradation of interfacial SiO2 in HfO2-FeFET devices is presented. We found that cycling generated trap sites, which capture electron during read operation, recover with time, resulting in an accelerated negative Vth shift during retention process. To understand reliability issues in FeFET accurately, not only charge trapping/de-trapping but also generation/recovery of trap sites themselves have to be considered.