The 71st JSAP Spring Meeting 2024
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Oral presentationCS Code-sharing session : 【CS.6】 Code-sharing Session of 6.1 & 13.3 & 13.5

[25a-1BJ-1~10]CS.6 Code-sharing Session of 6.1 & 13.3 & 13.5

Mon. Mar 25, 2024 9:00 AM - 11:30 AM JST
Mon. Mar 25, 2024 12:00 AM - 2:30 AM UTC
1BJ (Building No. 1)
Okamoto Kazuki(東工大)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[25a-1BJ-1][The 55th Young Scientist Presentation Award Speech] Disturb-free operation of HfO2-FeFET by controlling the ferroelectric / dielectric interfacial charge

〇Takamasa Hamai1, Kunifumi Suzuki1, Reika Ichihara1, Yoko Yoshimura1, Kiwamu Sakuma1, Matsuo Kazuhiro1, Shosuke Fujii1, Masumi Saitoh1 (1.Kioxia)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)English Presentation

[25a-1BJ-2]Impact of cycling degradation and its recovery in interfacial SiO2 in HfO2-FeFET on Vth behavior

〇Viktoria Schlykow1, Kunifumi Suzuki1, Yoko Yoshimura1, Takamasa Hamai1, Kiwamu Sakuma1, Kazuhiro Matsuo1, Kota Takahashi1, Masamichi Suzuki1, Masumi Saitoh1, Reika Ichihara1 (1.Institute of Memory Technology R&D, Kioxia Corporation)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)English Presentation

[25a-1BJ-3]Memory Window Narrowing Mechanisms and Recovery Behaviors in HZO/Si FeFETs

〇(D)ZUOCHENG CAI1, Kasidit Toprasertpong1, Mitsuru Takenaka1, Shinichi Takagi1 (1.The University of Tokyo)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[25a-1BJ-4]Lifetime improvement of dielectric breakdown in HfO2-based ferroelectric capacitors
by ozone oxidation of the bottom electrode

〇(D)Yuki Itoya1, Takuya Saraya1, Toshiro Hiramoto1, Masaharu Kobayashi1,2 (1.Univ. Tokyo IIS, 2.d.lab)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[25a-1BJ-5]Investigation of ferroelectric HfN formation on Si(100) by Kr/N2-plasma sputtering

〇(B)Sekiguchi Yuki1, Kangbai Li1, Ide Akinori1, Hamada Kaimu1, Ohmi Shun-ichiro1 (1.Tokyo Inst.)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25a-1BJ-6]Remanent polarization enhancement in HfO2 thin films induced by polarization switching under mechanical tensile strain and its possible origin

〇Tatsuya Inoue1, Takashi Onaya2, Koji Kita1,2 (1.School of Eng., The Univ. of Tokyo, 2.GSFS, The Univ. of Tokyo)
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[25a-1BJ-7]Thickness dependence of EC in ferroelectric HfO2 (ii)

〇Akira Toriumi1, Shinji Migita2 (1.Free Engineer, 2.AIST)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[25a-1BJ-8]Polarization switching speed under negative capacitance state

〇Akira Toriumi1, Shinji Migita2 (1.Free Engineer, 2.AIST)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[25a-1BJ-9]Dielectric Response Analysis of Hf-Zr-O Ferroelectric Thin Films

〇Shinji Migita1, Hiroyuki Ota1, Shutaro Asanuma1, Yukinori Morita1 (1.AIST)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[25a-1BJ-10]Ferroelectricity Development with Crystallographic Phase Transformation in Hf0.5Zr0.5O2 Thin Films upon Initial Stimulation of an Electric Field Exceeding the Coercive Field

〇Yukinori Morita1, Takashi Onaya2, Shutaro Asanuma1, Hiroyuki Ota1, Shinji Migita1 (1.AIST, 2.The Univ. of Tokyo)
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