Presentation Information
[25a-52A-4]The Study of Electrical Characteristics of GaN MIS-HEMT at Cryogenic Temperature
〇(D)Muhammad Sofyan Habibi1, Chin-Han Chung1, Yi-En Chang Chien1, Cheng-Jun Ma1, Chih-Yi Yang1, You-Chen Weng1, Sheng-Shiuan Yeh1, Edward-Yi Chang1 (1.National Yang Ming Chiao Tung Univ.)
Keywords:
GaN,Cryogenic Temperature,DC Characteristics
Gallium nitride (GaN) high electron mobility transistors (HEMTs) are employed in an increasing number of applications due to their superior properties, capable of operating at a higher power and a higher speed, compared to conventional Si-based devices [1]. Additionally, the wide bandgap of GaN allows these devices to showcase a strong tolerance to ionizing radiation, a crucial trait extremely appealing for space applications such as satellites, space stations, and space probes [2]. Recently, HEMTs adopting the InAlGaN/GaN epitaxial structure has been investigated by our group, demonstrating a higher current density than conventional GaN HEMTs [3]. However, to operate in space reliably, their electrical behavior under extremely low temperatures needs to be explored. In this work, we investigated the electrical characteristics of InAlGaN/GaN Metal-Insulator-Semiconductor (MIS)- HEMT with varying temperature from room temperature to the cryogenic temperature of ~15 K. It was discovered that the on-resistance (Ron) decreased from at room temperature to at ~15 K. The transconductance (Gm) was also found to be increasing with decreasing temperature due to reduced carrier scattering.
Reference
[1] S. Musumeci, V. L. Barba. (2023). Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives. Energies
[2] M. Zafrani, J. Brandt, R. Strittmatter, B. Sun, S. Zhang and A. Lidow, Radiation Results for Modern GaN-on-Si Power Transistors, 2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC), Provo, UT, USA, 2022, pp. 1-4
[3] Y. C. Weng, C. H. Chung, C. J. Ma, C. Y. Yang, Y. P. Lan, H. C. Kuo, and E. Y. Chang. (2023). High Current Density and Low Ron Quaternary InAlGaN MIS-HEMT on Si for Power Applications. ECS Journal of Solid State Science and Technology
Reference
[1] S. Musumeci, V. L. Barba. (2023). Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives. Energies
[2] M. Zafrani, J. Brandt, R. Strittmatter, B. Sun, S. Zhang and A. Lidow, Radiation Results for Modern GaN-on-Si Power Transistors, 2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC), Provo, UT, USA, 2022, pp. 1-4
[3] Y. C. Weng, C. H. Chung, C. J. Ma, C. Y. Yang, Y. P. Lan, H. C. Kuo, and E. Y. Chang. (2023). High Current Density and Low Ron Quaternary InAlGaN MIS-HEMT on Si for Power Applications. ECS Journal of Solid State Science and Technology