The 71st JSAP Spring Meeting 2024
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Session Details

Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[25a-52A-1~9]13.7 Compound and power devices, process technology and characterization

Mon. Mar 25, 2024 9:00 AM - 11:30 AM JST
Mon. Mar 25, 2024 12:00 AM - 2:30 AM UTC
52A (Building No. 5)
Taketomo Sato(Hokkaido Univ.)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25a-52A-1]The Effect of Sequential Nitrogen Ion Implantation on Compensating Donor Concentration in Mg-implanted p-GaN

〇Kensuke Sumida1, Keita Kataoka3, Tetsuo Narita3, Masahiro Horita1,2, Tetsu Kachi1,2, Jun Suda1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Toyota Central R&D Labs., Inc)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[25a-52A-2]Mg diffusion in Mg and N ion-implanted GaN

〇Emi Kano1, Jun Uzuhashi2, Koki Kobayashi1, Kosuke Ishikawa1, Kyosuke Sawabe1, Tetsuo Narita3, Kacper Sierakowski4, Michal Bockowski4,1, Tadakatsu Ohkubo2, Tetsu Kachi1, Nobuyuki Ikarashi1 (1.Nagoya Univ., 2.NIMS, 3.Toyota Central labs., 4.IHPP PAS)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25a-52A-3]Characterization of GaN vertical JBS diodes fabricated by channeled implantation of Mg ions and ultra-high-pressure annealing

〇Kazuki Kitagawa1, Maciej Matys2, Tsutomu Uesugi2, Tetsu Kachi2, Masahiro Horita1,2, Jun Suda1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[25a-52A-4]The Study of Electrical Characteristics of GaN MIS-HEMT at Cryogenic Temperature

〇(D)Muhammad Sofyan Habibi1, Chin-Han Chung1, Yi-En Chang Chien1, Cheng-Jun Ma1, Chih-Yi Yang1, You-Chen Weng1, Sheng-Shiuan Yeh1, Edward-Yi Chang1 (1.National Yang Ming Chiao Tung Univ.)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[25a-52A-5]Loss Analysis and Prediction of Vertical GaN MOSFETs using SPICE simulations

〇Tohru Oka1,2, Yasuhisa Ushida1,2, Yu Yonezawa1 (1.IMaSS Nagoya Univ., 2.Toyoda Gosei)
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25a-52A-6]High-Voltage (105V) Switching Characteristics of Diamond MOSFET

〇Tomoki Shiratsuchi1, Niloy Chandra Saha1, Toshiyuki Oishi1, Makoto Kasu1 (1.Saga Univ.)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[25a-52A-7]High-Frequency Rectification Characteristics of Wide Band-Gap Semiconductor SBD

〇Yasuo Ohno1,2, Hiroko Itoh2, Tomomi Hiraoka2, Masataka Higashiwaki1,3 (1.Osaka Metropolitan Univ., 2.Laser Systems Inc., 3.NICT)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25a-52A-8]Structural Design of High-Frequency Ga2O3 Schottky Barrier Diodes for Application to Microwave Wireless Power Transmission

〇(M1)Kohki Eguchi1, Yudai Suehiro1, Romualdo Ferreyra1, Yasuo Ohno2, Masataka Higasiwaki1,3 (1.Osaka Metropolitan Univ., 2.Laser Systems Inc., 3.NICT)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25a-52A-9]Sn doping into β-Ga2O3 by KrF excimer laser

〇Misa Beppu1, Yohei Tanaka2, Keita Katayama1, Hisato Yabuta1,2 (1.ISEE, Kyushu Univ., 2.Gigaphoton NEXT GLP, Kyushu Univ.)
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