[25a-P01-1~51] 10 Spintronics and Magnetics (Poster)

[25a-P01-1] Substrate dependence of the inverse spin Hall effect in Bi-Te layered material/YIG stacked film

〇Misako Morota¹, Shogo Hatayama¹, Yasutomo Omori^1,2, Masahiko Ishida^1,2, Wipakorn Jevasuwan³, Naoki Fukata³, Yuta Saito^1,4 (1.AIST, 2.NEC Corp., 3.NIMS, 4.Tohoku Univ.)

Keywords:

chalcogenide material,layered material,inverse spin Hall effect

Bi-based layered chalcogenide materials, also known as topological insulators, are expected to convert current to spin current with high efficiency because of their strong spin-orbit interaction and are prospective as spin sources for realizing low-power spintronics devices. Usually, to obtain the current-to-spin current conversion efficiency, the inverse spin Hall effect or ST-FMR is measured using a stacked sample of the material and ferromagnetic metal for which the conversion efficiency is to be determined. However, it is difficult to accurately estimate the conversion efficiency of chalcogenide materials because the resistivity of chalcogenide materials is larger than that of metals, resulting in almost of the current converted from the spin current flowing into ferromagnetic metals. In this study, ferromagnetic insulator YIG was deposited on different substrates and layered structures of Bi and Te compounds (Bi_xTe_y) were fabricated on the YIG films, and their crystallinity and inverse spin Hall effect were investigated.