Presentation Information
[25a-P01-46]Tunnel magnetoresistance sensor using Ta-doped CoFeSiB soft magnetic layer
〇Takafumi Nakano1, Kosuke Fujiwara2, Masakiyo Tsunoda1,3, Seiji Kumagai2, Mikihiko Oogane1,4 (1.Tohoku Univ., 2.SSF Corp., 3.Tohoku Univ. Green X-tech, 4.Tohoku Univ. CSIS)
Keywords:
Tunnel magnetoresistance effect,Magnetic tunnel junction,Magnetic sensor