Presentation Information

English Presentation

[25a-P03-12]Ohmic contact formation on p-type Mg-doped Al-rich AlGaN/AlN heterostructures grown on AlN substrates

〇Guodong Hao¹, Shun Washiyama¹, Tomonori Matsushita¹, Shin-ichiro Inoue¹ (1.NICT)

Keywords:

p-type AlGaN,ohmic contact formation

It remains challenging to achieve excellent ohmic contact on high-Al-content p-AlGaN. In this talk, we report our findings on the observation of linear current-voltage (I–V) behavior in Al-rich p-AlGaN/AlN heterostructures and discuss its dependence on the thickness of the p-AlGaN layer.

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