The 71st JSAP Spring Meeting 2024
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Session Details

Poster presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[25a-P03-1~12]15.4 III-V-group nitride crystals

Mon. Mar 25, 2024 9:30 AM - 11:30 AM JST
Mon. Mar 25, 2024 12:30 AM - 2:30 AM UTC
P03 (Building No. 9)

[25a-P03-1]Van der Waals epitaxy of transferable InGaN by RF-MBE method

〇(B)Riku Nambu1, Shota Hattori1, Tsutomu Araki1, Shinichiro Mouri1 (1.Ritsumeikan Univ. Col. of Sci. & Eng.)

[25a-P03-2]Non-contact and non-destructive electrical property measurement of InGaN thin films on ScAlMgO4 substrates using THz-TDSE(1)
~ Clarification of background dielectric constant and effective mass ~

〇Kaito Tsuchida1, Touya Yagura1, Yuta Kubo1, Dingding Wang1, Takashi Fujii1,2, Toshiyuki Iwamoto2, Momoko Deura1, Tutomu Araki1 (1.Ritsumei Univ., 2.NIPPO PRECISION)

[25a-P03-3]Investigation of optical activity enhancement of chiral InGaN nanopillar arrays

〇Yuta Asai1, Takeki Aikawa2, Umito Kurabe2, Akihiko Kikuchi2,3,4, Takao Oto1 (1.Yamagata Uinv., 2.Sophia Univ., 3.Sophia Photon., 4.Sophia Semicon.)

[25a-P03-4]Influence of silicon nitride interlayer on external quantum efficiency of micro-LEDs

〇Heaejong Cheong1,2,3, Jeong Hwan Park3, Markus Pristovsek1, Woong Kown2, Hiroshi Amano1,2,3,4 (1.IMaSS, Nagoya Univ., 2.Dep.of Electronics, Nagoya Univ., 3.D-centerVBL, Nagoya Univ., 4.IAR, Nagoya Univ.)

[25a-P03-5]Realization of pseudomorphic GaN growth on AlN by MOVPE method

〇Akira Yoshikawa1,2, Takaharu Nagatomi1, Kazuhiro Nagase1, Sho Sugiyama1, Leo Schowalter2 (1.Asahi Kasei, 2.Nagoya university)

[25a-P03-6]Investigation of conversion efficiency of different Ga oxidants in OVPE-GaN

〇Tsubasa Nakazono1, Shigeyoshi Usami2, Masayuki Imanishi2, Tomoaki Sumi3, Junichi Takino3, Yoshio Okayama3, Mihoko Maruyama2, Masashi Yoshimura4, Masahiko Hata5, Masashi Isemura6, Yusuke Mori2 (1.Osaka Univ., 2.Grad. Sch. of Eng., Osaka Univ., 3.Panasonic Holdings Corp., 4.ILE, Osaka Univ., 5.Itochu Plastics Inc., 6.Sosho-Ohshin Inc.)

[25a-P03-7]Evaluation of Electrical Properties of Mg Ion-implanted GaN Single Crystals using THz-TDSE (III)

〇Dingding Wang1, Kaito Tsuchida1, Takashi Fujii1,3, Momoko Deura2, Toshiyuki Iwamoto3, Atsushi Suyama4, Hitoshi Kawanowa4, Tsutomu Araki1 (1.Ritsumeikan Univ., 2.R-GIRO, 3.PNP, 4.ion Technology Center Co., Ltd)

[25a-P03-8]Anodization voltage dependence of electrical properties of anodized n-GaN in two-step wet etching method

〇zhaobei li1, Gaku Kamio1, Ren Morita1, Hiroshi Fujioka2, Narihiko Maeda1 (1.Tokyo Univ. of Technology, 2.Inst. of Industrial Sicence, the Univ. of Tokyo)

[25a-P03-9]Defect reaction analysis around VGa-VN in gallium nitride

Jota Nakamura1, 〇Masato Oda1, Yoshihiro Kangawa2 (1.Wakayama Univ., 2.Kyushu Univ.)

[25a-P03-10]The electronic states of the gallium-nitride with a point defect terminated by fluorine atoms

〇(B)Yuki Fujishiro1, Tomoe Yayama1, Takahiro Nagata2, Toyohiro Chikyow2 (1.Kogakuin Univ., 2.NIMS)

[25a-P03-11]Theoretical study on structural stability and miscibility of ScAlN alloys: influence of substrate constraints

〇Takuto Miyamoto1, Toru Akiyama1, Takahiro Kawamura1 (1.Mie Univ.)
English Presentation

[25a-P03-12]Ohmic contact formation on p-type Mg-doped Al-rich AlGaN/AlN heterostructures grown on AlN substrates

〇Guodong Hao1, Shun Washiyama1, Tomonori Matsushita1, Shin-ichiro Inoue1 (1.NICT)
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