[25p-21C-1~6] 15.4 III-V-group nitride crystals

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[25p-21C-2] Carrier scattering mechanism of pressurized MOVPE-grown In-polar InN

〇Yudai Yamashita¹, Kazuhide Kumakura¹, Yoshitaka Taniyasu¹ (1.NTT BRL)

Keywords:

Indium nitride,MOVPE growth