The 71st JSAP Spring Meeting 2024
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Session Details

Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[25p-21C-1~6]15.4 III-V-group nitride crystals

Mon. Mar 25, 2024 1:30 PM - 3:00 PM JST
Mon. Mar 25, 2024 4:30 AM - 6:00 AM UTC
21C (Building No. 2)
Hamaguchi Tatsushi(Mie Univ.)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)English Presentation

[25p-21C-1]Structural and morphological investigation of N-polar InGaN epilayers grown on misoriented ScAlMgO4 substrates

〇(D)Mohammed Ali Najmi1, Pavel Kirilenko1, Daisuke Iida1, Kazuhiro Ohkawa1 (1.King Abdullah Univ. of Science and Technology)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[25p-21C-2]Carrier scattering mechanism of pressurized MOVPE-grown In-polar InN

〇Yudai Yamashita1, Kazuhide Kumakura1, Yoshitaka Taniyasu1 (1.NTT BRL)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25p-21C-3]Growth temperature dependence of RF-MBE of InAlN thermoelectric thin films

〇Shota Hattori1, Tsutomu Araki1, Momoko Deura2 (1.Ritsumeikan Univ., 2.R-GIRO)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25p-21C-4]Epitaxial growths of highly efficient GaN VCSELs with GaInN under layer and in-situ cavity length control

〇Taichi Nishikawa1, Kenta Kobayashi1, Ruka Watanabe1, Mitsuki Yanagawa1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Motoaki Iwaya1 (1.Meijo Univ.)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25p-21C-5]Investigation for improvement of red MQW active layer on ScAlMgO4 substrate

〇(B)Ryotaro Ito1, Ryusei Sakamoto1, Yuma Kato1, Seiji Ishimoto2, Emi Matsuyama2, Atsushi Suzuki2, Motoaki Iwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Makoto Matsukura3, Takahiro Kojima3, Atsushi Fujita4, Fuminori Yoda4, Shigeki Matsunaka4 (1.Meijo Univ., 2.E&E Evolution Ltd., 3.Oxide Co., 4.Shibaura Mechatronics Co.)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[25p-21C-6]Broadband InGaN-based microlens structures covering full-color component

〇Yoshinobu Matsuda1, Akitoshi Takahama1, Mitsuru Funato1, Yoichi Kawakami1 (1.Kyoto Univ.)
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