Presentation Information
[25p-61A-1]Role of Zn Introduction in In2O3 TFTs
−Suppression of Grain Boundary Scattering −
〇(D)Yuzhang Wu1, Yusaku Magari2, Prashant R. Ghediya2, Yuqiao Zhang3, Yasutaka Matsuo2, Hiromichi Ohta2 (1.IST-Hokkaido Univ., 2.RIES-Hokkaido Univ., 3.Jiangsu Univ.)
Keywords:
Thin film transistor,In2O3(ZnO),Amorphous
In2O3 TFTs have attracted attention as the backplane of high-speed and precise displays because they show high field effect mobility (μFE) ~100 cm2 V−1 s−1. However, there is a serious drawback; In2O3 TFTs usually show low reliability especially after applying negative gate bias stress, probably due to the formation of grain boundaries that absorb gas molecules from the atmosphere. In order to prevent the crystallization of In2O3, Zn ions are usually introduced. Since the crystal structure of In-Zn-O (IZO) is a complicated layered structure so-called homologous phase, the amorphous structure is stabilized. In this study, we investigated the effect of Zn introduction to In2O3 on the electron transport properties in detail.
Amorphous structure was stabilized when Zn/(Zn + In) was in the range of 0.25-0.7. The IZO TFT with Zn/(Zn + In) of 0.25 showed highest μFE of 70 cm2 V−1 s−1 with good reliability.
Amorphous structure was stabilized when Zn/(Zn + In) was in the range of 0.25-0.7. The IZO TFT with Zn/(Zn + In) of 0.25 showed highest μFE of 70 cm2 V−1 s−1 with good reliability.