[25p-61A-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices" | The 71st JSAP Spring Meeting 2024

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Oral presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[25p-61A-1~13]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Mon. Mar 25, 2024 1:00 PM - 4:45 PM JST
Mon. Mar 25, 2024 4:00 AM - 7:45 AM UTC

61A (Building No. 6)

Kosaku Shimizu(Nihon Univ.), Rie Togashi(Sophia Univ.)

1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[25p-61A-1]Role of Zn Introduction in In₂O₃ TFTs
−Suppression of Grain Boundary Scattering −

〇(D)Yuzhang Wu¹, Yusaku Magari², Prashant R. Ghediya², Yuqiao Zhang³, Yasutaka Matsuo², Hiromichi Ohta² (1.IST-Hokkaido Univ., 2.RIES-Hokkaido Univ., 3.Jiangsu Univ.)

1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[25p-61A-2]Investigating the Role of Hydrogen on RF-Sputtered Al-Doped ZnO Thin Films

〇(M2C)MuhammadFaizRHasian Rambey¹, Takaya Ogawa¹, Hideyuki Okumura¹ (1.Kyoto Univ.)

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25p-61A-3]Carrier density control of Sb-doped SnO₂ thin films and fabrication of a vertical Schottky barrier diode

〇Yui Takahashi¹, Hitoshi Takane¹, Hirokazu Izumi², Takeru Wakamatsu¹, Yuki Isobe¹, Kentaro Kaneko³, Katsuhisa Tanaka¹ (1.Kyoto Univ., 2.Hyogo Prefectural Institute of Technology, 3.Ritsumeikan Univ.)

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25p-61A-4]Determining factors of structural stability and electronic structures of InGaZnO₄-derivative crystalline semiconductors

〇Tomoya Suzuki¹, Keisuke Ide¹, Takayoshi Katase¹, Hideo Hosono¹, Toshio Kamiya¹ (1.MDXES, Tokyo Tech.)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25p-61A-5]Solid-phase epitaxy of Ga₂O₃ thin films on α-Al₂O₃ (0001) substrates by UV laser

〇Ryoya Kai¹, Takumi Numata¹, Satoru Kaneko^2,1, Mamoru Yoshimoto¹, Akifumi Matsuda¹ (1.Tokyo Tech, 2.KISTEC)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25p-61A-6]Anisotropic band edges of (Sc_xGa_1−x)₂O₃ films revealed by polarized reflectance spectroscopy

〇Kazuki koreishi¹, Takeyoshi Onuma², Takuto Soma¹, Akira Ohtomo¹ (1.Tokyo Tech, 2.Kogakuin Univ.)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25p-61A-7]Characterization of Temperature Dependence of Barrier Height in Ni/β-Ga₂O₃ SBDs and Measurement of Valence Band Structure of β-Ga₂O₃ by XPS

〇AKihira Munakata¹, Kohei Sasaki², Kentaro Ema², Yoshiaki Nakano¹, Masaki Kobayashi¹, Takuya Maeda¹ (1.Univ. of Tokyo, 2.Novel Crystal Technology, Inc.)

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25p-61A-8]Electrical Properties of Unintentionally Doped Ga₂O₃Thin Films Grown by Low-Pressure Hot-Wall MOCVD (1)

〇(B)Jun Morihara¹, Jin Inajima¹, Zhenwei Wang², Junya Yoshinaga^3,4, Shota Sato¹, Kohki Eguchi¹, Yoshinao Kumagai³, Masataka Higashiwaki^1,2 (1.Osaka Metropolitan Univ., 2.NICT, 3.Tokyo Univ. of Agric. and Tech., 4.TAIYO NIPPON SANSO CORP.)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25p-61A-9]Electrical Properties of Unintentionally Doped Ga₂O₃Thin Films Grown by Low-Pressure Hot-Wall MOCVD (2)

〇(B)Jin Inajima¹, Jun Morihara¹, Zhenwei Wang², Junya Yoshinaga^3,4, Shota Sato¹, Kohki Eguchi¹, Yoshinao Kumagai³, Masataka Higashiwaki^1,2 (1.Osaka Metropolitan Univ., 2.NICT, 3.Tokyo Univ. of Agric. and Tech., 4.TAIYO NIPPON SANSO CORP.)

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25p-61A-10]Effects of Oxygen Reactive Ion Etching and Nitrogen Radical Irradiation on Temperature-Dependent Electrical Properties of Ga₂O₃ (010) Schottky Barrier Diodes

〇(M1)Shota Sato¹, Akimasa Mineyama¹, Zhenwei Wang², Masataka Higashiwaki^1,2 (1.Osaka Metropolitan Univ., 2.NICT)

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25p-61A-11]Emission Microscopy Observation of Polycrystalline Defect Array in (001) HVPE-Grown Epi Thick Film β-Ga₂O₃ Schottky Barrier Diodes

〇(M1)Yuto Otsubo¹, Kohei Sasaki², Jun Arima³, Minoru Fujita³, Katsumi Kawasaki³, Akito Kuramata², Makoto Kasu¹ (1.Saga Univ., 2.Novel Crystal Technology, Inc., 3.TDK Corporation)

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25p-61A-12]MESFET based on Ge-doped α-Ga₂O₃ thin films

〇Takeru Wakamatsu¹, Yuki Isobe¹, Hitoshi Takane¹, Kentaro Kaneko², Katsuhisa Tanaka¹ (1.Kyoto Univ., 2.Ritsumeikan Univ.)

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[25p-61A-13]Fabrication of mesa-shaped Ga₂O₃/Air DBR structures for Wavelength conversion device

〇Shuya Sato¹, Tomoaki Momma¹, Takeki Aikawa¹, Akihiko Kikuchi^1,2,3 (1.Sophia Univ., 2.Sophia Photonics Research Center, 3.Sophia Semiconductor Research Inst.)

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