Presentation Information
[25p-61C-10]Residual Stress Distribution in Unitary Interconnect Metals for Beyond 2nm Logic Nodes: A Molecular Dynamics Study Based on Neural Network Potential
〇Shuichiro Hashimoto1, Takanobu Watanabe1,2 (1.Wasda Univ. SEES, 2.Waseda Univ. FSE)
Keywords:
interconnects,molecular dynamics simulation,machine learning potential
In the Back-End-Of-Line (BEOL) processes for beyond 2nm logic nodes, it is anticipated that there will be a material shift from traditional copper (Cu) to metals such as Ruthenium (Ru). Additionally, the introduction of buried rail structure and nano-through silicon via structure is leading to structural changes. Considering these trends, the mechanical properties of metal wiring, which are crucial to wiring reliability due to stress migration, continue to be of paramount importance. This study utilizes Neural Network Potential (NNP)-based molecular dynamics simulation, to evaluate the residual stress in unitary interconnect metals surrounded by SiO2 layers.