Presentation Information
[25p-71A-3]Fabrication of stacked RGB monolithic GaInN-based μLED arrays using tunnel junctions and challenges for metaverse applications
〇Motoaki Iwaya1, Tatsunari Saito1, Yoshiobu Suehiro1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Daisuke Iida2, Kazuhiro Ohkawa2 (1.Meijo Univ., 2.KAUST)
Keywords:
stacked RGB monolithic GaInN based micoro LED arrays,tunnel junction,metaverse
The application of GaInN-based μLEDs to self-illuminated displays has attracted widespread attention because of their ability to achieve full color in a single material system. Considering the application to head-mounted displays with extremely small pixel size, it is ideal to form a monolithic display by stacking RGB LEDs on a single wafer using crystal growth and semiconductor processes. There have already been reports on the application of monolithic structures consisting of sequentially stacked RGB pn-junction LEDs. However, in order to drive the device, it is necessary to expose the p-type and n-type layers of each LED by etching and to form electrodes on each surface. However, a method to form low-contact-resistance electrodes on the etched p-type layer has not been established because of the donor defects in nitride semiconductors that are commonly observed in dry etching. Therefore, we proposed a method of forming a tunnel junction layer between each RGB device by crystal growth and forming electrodes on the etched n-type layer, and reported a stacked monolithic RGB full-color μLED array. By driving this μLED array pixel by pixel, red, green, and blue emission was obtained. In this presentation, we discuss the characteristics and potential of the obtained devices, as well as the possibility and current status of this technology in comparison with other methods such as OLED, liquid crystal, and quantum dot.