Session Details
[25a-P02-1~5]15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy
Mon. Mar 25, 2024 9:30 AM - 11:30 AM JST
Mon. Mar 25, 2024 12:30 AM - 2:30 AM UTC
Mon. Mar 25, 2024 12:30 AM - 2:30 AM UTC
P02 (Building No. 9)
[25a-P02-1]Variation of the emission wavelength of InAs quantum dots with the growth rate of the strain-reducing layer deposited on the embedded quantum dots
〇Tatsuki Yokota1, Yuuki Carl Hodson1, Koki Okuno1, Nobuhiko Ozaki1 (1.Wakayama Univ.)
[25a-P02-2]Monolithic multi-wavelength vertical emission using broadband emitting quantum dots and selective-area grown vertical cavities
〇Yuuki Carl Hodson1, Tatsuki Yokota1, Koki Okuno1, Nobuhiko Ozaki1 (1.Wakayama Univ.)
[25a-P02-3]Theoretical Analysis on Improved Crystallinity of Antimony Surfactant Mediated Epitaxy of
Phosphide-Based III-V Diluted Nitride alloys
〇(B)Yamato Kyuno1, Keisuke Yamane1 (1.Toyohashi Tech.)
[25a-P02-4]Two-wavelength excited photoluminescence study of GaAsN/GaAs heterostructures
〇(D)Abdou Karim Niang1, Naofumi Uchiyama1, Kengo Takamiya1, Shuhei Yagi1, Hiroyuki Yaguchi1 (1.Saitama univ)
[25a-P02-5]Growth of GaAs by MBE on CVD Diamond Substrate (2)
〇Shouya Kiuchi1, Ryuji Oshima1, Kanji Iizuka1 (1.NIT)