[10a-N201-1~11] 9.4 Thermoelectric conversion

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[10a-N201-2] Thermoelectric power factor of selectively oxygen vacancy-introduced epitaxial SnO₂ film/r-Al₂O₃ with low thermal conductivity

〇Takafumi Ishibe^1,2, Tsukasa Terada¹, Nobuyasu Naruse³, Yutaka Mera³, Yuichiro Yamashita⁴, Eiichi Kobayashi⁵, Yoshiaki Nakamura^1,2 (1.Eng. Sci, The Univ. Osaka, 2.OTRI, 3.Shiga Univ. Medical Science, 4.AIST, 5.SAGA-LS)

Keywords:

Thermoelectric material,Oxide film,Oxygen vacancy

We have achieved ultralow thermal conductivities in SnO₂ films by selectively manipulating O^2- anions (oxygen vacancies). However, it has been unclear that the SnO₂ films exhibit high thermoelectric power factors in a wide temperature range. In this study, we demonstrate high thermoelectric performances of SnO₂ films with selectively-manipulated O^2- anions in a wide temperature range by obtaining their thermoelectric power factors above room temperature.