[10a-N201-1~11] 9.4 Thermoelectric conversion

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-N201-5] Improvement of Quality and Thermoelectric Properties of Epitaxial Mg₃Bi₂ Thin Films by a-Si Capping

〇(DC)Akito Ayukawa¹, Takeru Kuriyama¹, Koki Nejo¹, Wakaba Yamamoto², Akira Yasuhara², Haruhiko Udono¹, Shunya Sakane¹ (1.Ibaraki Univ., 2.JEOL Ltd.)

Keywords:

Thermoelectric materials,Mg3Bi2,Epitaxial growth

Thin-film thermoelectric materials are expected to be applied to IoT devices because they are small and lightweight independent power sources. Among them, Mg₃Bi₂-based materials show excellent thermoelectric performance near room temperature. However, they are very unstable under atmospheric conditions and have been reported to adversely affect thermoelectric performance.
In this study, epitaxial Mg₃Bi₂ thin films with a-Si capping were prepared to provide atmospheric stability, and their thermoelectric properties were evaluated.