[10a-N206-1~10] 6.3 Oxide electronics

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-N206-2] Effects of Yb doping on physical properties of EuO thin films

〇(M1)Ayumu Kikuchi¹, Kenichi Kaminaga¹, Shingo Maruyama¹, Yuji Matsumoto¹ (1.Tohoku Univ.)

Keywords:

thin films,PLD,EuO

The ferromagnetic semiconductor EuO is a promising next-generation spintronics material because of its huge magneto-optical and spin-filtering effects. In this study, we systematically investigated the effects of Yb doping on the crystal structure and magnetic properties of EuO by preparing Eu_1-xYb_xO mixed crystal films with Yb as the dopant of choice.