[10a-N221-1~10] 3.10 Photonic structures and phenomena

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[10a-N221-8] 20 W peak power InP-based photonic crystal surface-emitting laser fabricated by mass production wafer process line

〇Kazumasa Kishimoto¹, Daisuke Tsunami¹, Eiji Nakai¹, Shoyo Hara¹, Takahiro Ueno¹, Hirofumi Matsuoka¹, Ryo Okuhata¹, Yasuyuki Nakagawa¹, Yasunori Miyazaki¹ (1.Mitsubishi Electric Corp.)

Keywords:

photonic crystal,semicoductor laser

The photonic crystal surface-emitting laser (PCSEL) is attracting attention as a semiconductor laser source that achieves both high output power and high beam quality. In this study, with the aim of practical implementation of PCSELs as light sources for optical sensing, we fabricated a 1.5 μm wavelength InP-based PCSEL using a mass production wafer process line. As a result, we confirmed laser oscillation under pulsed operation with a peak optical output of 21W, a single peak with a narrow beam (approximately 0.4°), a single wavelength, and optical output stability after 200 hours of pulsed operation.