Presentation Information

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-N301-3]Lateral Mg activation annealing in GaN-based LEDs with bottom tunnel junctions

〇Rita Higashi¹, Kazuki Osada¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Satoshi Kamiyama¹ (1.Meijo University)

Keywords:

Tunnel Junction,activation annealing

This study focused on optimizing activation annealing for bottom tunnel junction (Bottom-TJ) LEDs to improve their performance. Bottom-TJ LEDs generally show higher operating voltages than top-TJ LEDs,likely due to less optimized impurity profiles and annealing conditions. We fabricated Bottom-TJ LEDs and compared nitrogen (N2) and oxygen (O2) annealing.O2 annealing provided stronger activation, resulting in stable forward voltages and better p-type conductivity. However, it caused increased surface roughness, about 1.0 V higher operating voltage at 3.0 kA/cm^2, and reduced optical output to around 70% of N2-annealed devices. Atomic force microscopy confirmed surface degradation after O2 annealing.While O2 annealing enhances activation, it worsens surface quality and device performance. Future work should focus on surface protection during O2 annealing and optimizing temperature and duration to improve Bottom-TJ LED characteristics.

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