The 86th JSAP Autumn Meeting 2025
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Session Details

Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[10a-N301-1~11]15.4 III-V-group nitride crystals

Wed. Sep 10, 2025 9:00 AM - 12:00 PM JST
Wed. Sep 10, 2025 12:00 AM - 3:00 AM UTC
N301 (Lecture Hall North)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[10a-N301-1]Lasing Characteristics of Optically Pumped InGaN/GaN Thin-Film Core Lasers with GaN/Air-DBRs

〇Sotaro Iijima1, Yuki Takahashi1, Shuya Sato1, Akihiko Kikuchi1,2 (1.Sophia Univ, 2.Sophia Semiconductor Research Inst)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-N301-2]Measurement of acceptor concentration in LED with top GaN tunnel junction

〇Kazuki Osada1, Hisanori Ishiguro1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Motoaki Iwaya1 (1.Meijo Univ.)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-N301-3]Lateral Mg activation annealing in GaN-based LEDs with bottom tunnel junctions

〇Rita Higashi1, Kazuki Osada1, Tetsuya Takeuchi1, Motoaki Iwaya1, Satoshi Kamiyama1 (1.Meijo University)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-N301-4]Electrical and optical properties of two junction LED with Ga0.89In0.11N tunnel junctions

〇(M1)Satoshi Yamaguchi1, Kazuki Osada1, Rita Higashi1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Motoaki Iwaya1 (1.Meijo Univ.)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-N301-5]Dependence of In-containing under layer with green active layer on GaN substrates

〇Yoshito Ando1, Atsunori Tokushi1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Motoaki Iwaya1, Kentaro Nonaka2, Yoshitaka Kuraoka2, Takashi Yoshino2 (1.Meijo Univ., 2.NGK Insulators, LTD)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[10a-N301-6]High Efficient Green Emission from Ag-coated InGaN/GaN Quantum Well by Ultra-Viotet Laser Irradiation and Annealing

〇(M1)Naoki Ueda1, Shun Ito1, Tetsuya Matsuyama1, Shunsuke Murai1, Kenji Wada2, Mitsuru Funato3, Yoichi Kawakami3, Koichi Okamoto1 (1.Osaka Metro. Univ., 2.OMU-ESCARI, 3.Kyoto Univ.)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-N301-7]Impact of under-via n-type layer thickness on the electrical characteristics of step-free GaInN stacked monolithic μLED arrays

〇Koko Fukushima1, Yuki Shimizu1, Keisuke Takeya1, Yoshinobu Suehiro1, Satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1 (1.Meijo Univ.)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-N301-8]Development of a Single-Cathode Driven Stacked GaInN μLED Array Using Conductive Vias

〇Yuki Shimizu1, Koko Fukushima1, Keisuke Takeya1, Yoshinobu Suehiro1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Motoaki Iwaya1 (1.Fac.Sci.&Tech, Meijo Univ)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[10a-N301-9]Multifunctional Micro-LED Probes for In Vivo Photopharmacological Applications

〇Kazuki Moriya1, Atsushi Nishikawa2, Alexander Loesing2, Noriaki Ohkawa3, Hiroto Sekiguchi1,4 (1.Toyohashi Tech, 2.ALLOS, 3.Dokkyo Med. Univ., 4.Meijo Univ.)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[10a-N301-10]Flip Transfer Process of Micro-LEDs with Sn/In Metal

〇Kazuto Matsui1, Ryota Kanda1, Atsushi Nishikawa2, Alexander Loesing2, Hiroto Sekiguchi3,1 (1.Toyohashi Tech., 2.ALLOS, 3.Meijo Univ.)
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[10a-N301-11]Design of Linear/Nonlinear QPM Photon Pair Generation Device using InGaN Laser Epitaxial Wafer

〇Takumi Wada1, Hiroki Ogawa1, Masahiro Uemukai1, Tomoyuki Tanikawa1, Ryuji Katayama1 (1.The Univ. of Osaka)
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