[10a-N303-1~11] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[10a-N303-5] Spatial modulation of electron spin wave in a (001) GaAs/AlGaAs quantum well toward NOT gate operation

〇Koga Akagi¹, Futa Sugawara¹, Jun Ishihara¹, Keito Kikuchi¹, Daiki Sekine², Sota Yamamoto¹, Kohda Makoto^1,2,3,4 (1.Grad. Sch. of Eng., Tohoku Univ., 2.QUARC, QST, 3.CSIS, Tohoku Univ., 4.DEFS, Tohoku Univ.)

Keywords:

Electron spin wave,Semiconductor quantum well,Logic operation

Electron spin waves emerged in a persistent spin helix state exhibit wave-like characteristics and have the potential to serve as information carriers for multiplexed and parallel information processing. A previous study has simulated a majority logic gate using spin waves which can implement AND and OR gate operations. However, NOT gate operation has not been demonstrated. In this study, we demonstrate the spatial modulation of electron spin wave in a (001) GaAs/AlGaAs quantum well-based semiconductor wire structure with different widths. In this structure, the different widths provide different drift velocities. This enables the spatial modulation of electron spin waves since electron spin wavelength is a function of the spin–orbit interaction parameters and drift velocity. We experimentally investigated the spatial distribution of electron spin and show that channel width induces wavelength modulation. Measurements are conducted at 5 K by magneto-optical Kerr rotation microscopy.