Session Details

[10a-N303-1~11]10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

Wed. Sep 10, 2025 9:00 AM - 12:00 PM JST
Wed. Sep 10, 2025 12:00 AM - 3:00 AM UTC
N303 (Lecture Hall North)

[10a-N303-1][The 58th Young Scientist Presentation Award Speech] Advancing optical evaluation of persistent spin helix states in a GaAs/AlGaAs two-dimensional electron gas via programmable spin helix patterning

〇Keito Kikuchi1, Jun Ishihara1, Miari Hiyama1, Sota Yamamoto1, Yuzo Ohno2, Makoto Kohda1,3,4,5 (1.Grad. Sch. of Eng., Tohoku Univ., 2.Univ. of Tsukuba, 3.CSIS, Tohoku Univ., 4.DEFS, Tohoku Univ., 5.QUARC, QST)

[10a-N303-2]ab initio Quasi-Particle calculations and Spin Other Orbital Coupling for Bi2Se3

〇Jun Inagaki1 (1.HiSOR)

[10a-N303-3]Quantitative consideration of spin-relaxation mechanisms in (110) GaAs/AlGaAs quantum wells II

〇Yuzo Ohno1,2, Satoshi Iba2 (1.Univ. of Tsukuba, 2.AIST)

[10a-N303-4]Linear Photogalvanic Effect in Centrosymmetric Dirac Semimetals

〇Yuta Kobayashi1, Akihiro Ozawa1, Masashi Kawaguchi1, Shunzhen Wang1, Ryota Miyazaki1, Kohei Fujiwara2, Ryo Shimano1, Atsushi Tsukazaki1, Takashi Oka1, Masamitsu Hayashi1 (1.Univ. Tokyo, 2.Rikkyo Univ.)

[10a-N303-5]Spatial modulation of electron spin wave in a (001) GaAs/AlGaAs quantum well toward NOT gate operation

〇Koga Akagi1, Futa Sugawara1, Jun Ishihara1, Keito Kikuchi1, Daiki Sekine2, Sota Yamamoto1, Kohda Makoto1,2,3,4 (1.Grad. Sch. of Eng., Tohoku Univ., 2.QUARC, QST, 3.CSIS, Tohoku Univ., 4.DEFS, Tohoku Univ.)

[10a-N303-6]Circularly polarized electroluminescence properties of spin-polarized light-emitting diodes using multilayer InGaAs quantum dots

〇Itsu Tanaka1, Daiki Mineyama1, Ayano Morita1, Hiroto Kise1, Junichi Takayama1, Akihiro Murayama1, Satoshi Hiura1 (1.IST, Hokkaido Univ.)

[10a-N303-7]Effect of light-absorbing layer thickness on light polarization detection properties of GaNAs photodiode based on defect-enabled spin filtering

〇Daiki Mineyama1, Itsu Tanaka1, Kaito Nakama2, Hidetoshi Hashimoto2, Keisuke Minehisa2, Junichi Takayama1, Fumitaro Ishikawa2, Akihiro Murayama1, Satoshi Hiura1 (1.IST, Hokkaido Univ., 2.RCIQE, Hokkaido Univ.)

[10a-N303-8]Device Design Guideline for High-Performance Si-based Spin MOSFETs

〇Yuki Takahashi1, Shoichi Sato1,2, Masaaki Tanaka1,2, Ryosho Nakane1,3 (1.EEIS, Tokyo Univ., 2.CSRN, Tokyo Univ., 3.d.lab, Tokyo Univ.)

[10a-N303-9]Non local detection of current induced magnetization switching using lateral spin-valve device

〇(DC)Mineto Ogawa1, Yu Osada1, Michihiko Yamanouchi1, Tetsuya Uemura1 (1.IST. Hokkaido Univ.)

[10a-N303-10]Weak anti-localization effect in In-doped SnTe thin films

〇Ryota Uesugi1, Ryo Ando2, Masaomi Mizuno1, Tomosuke Aono1, Takahiro Chiba3, Takashi Komine1 (1.Ibaraki Univ., 2.Ibaraki College, 3.Yamagata Univ.)

[10a-N303-11]Large field-free superconducting diode effect in α-Sn / β-Sn planar heterostructures

〇Yuta Okuyama1, Le Duc Anh1,2, Masaaki Tanaka1,2 (1.Univ. of Tokyo, 2.CSRN, Univ. of Tokyo)